{"_buckets": {"deposit": "189af4af-1403-4d91-898c-edd525346418"}, "_deposit": {"created_by": 5, "id": "846", "owners": [5], "pid": {"revision_id": 0, "type": "depid", "value": "846"}, "status": "published"}, "_oai": {"id": "oai:yamanashi.repo.nii.ac.jp:00000846", "sets": ["112"]}, "author_link": ["4952", "4953", "4954", "4955"], "item_2_alternative_title_1": {"attribute_name": "タイトル(別表記)", "attribute_value_mlt": [{"subitem_alternative_title": "Study of Plasma Effects in Silicon Semiconductor Detectors (I)", "subitem_alternative_title_language": "en"}]}, "item_2_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "1989", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "57", "bibliographicPageStart": "51", "bibliographicVolumeNumber": "6", "bibliographic_titles": [{"bibliographic_title": "山梨医科大学紀要", "bibliographic_titleLang": "ja"}, {"bibliographic_title": "Bulletin of Yamanashi Medical University", "bibliographic_titleLang": "en"}]}]}, "item_2_creator_2": {"attribute_name": "著者名", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "北原, 哲夫", "creatorNameLang": "ja"}]}, {"creatorNames": [{"creatorName": "伊藤, 眞", "creatorNameLang": "ja"}]}, {"creatorNames": [{"creatorName": "荻野, 晃也", "creatorNameLang": "ja"}]}, {"creatorNames": [{"creatorName": "牛田, 恵美子", "creatorNameLang": "ja"}]}]}, "item_2_description_5": {"attribute_name": "内容", "attribute_value_mlt": [{"subitem_description": "表面障壁型シリコン半導体検出器(Si-SBD)は、運動エネルギーが数MeV以上の重イオン検出に際して\"\"プラズマ効果\"と称される特異な応答を示す。本研究では、このプラズマ効果を調べるため、京都大学タンデム加速器からのO(酸素)イオンビームを用いてパルスの波高と立ち上がり時間を測定した。Si-SBDへの前面および裏面入射して得た立ち上がり時間からプラズマ時間を導出した。プラズマ時間のエネルギー、阻止能および印加電圧依存性に関して、Seibt達の理論モデルと比較検討した。", "subitem_description_language": "ja", "subitem_description_type": "Other"}]}, "item_2_full_name_24": {"attribute_name": "著者名(別表記)", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "4952", "nameIdentifierScheme": 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{"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0910-5069", "subitem_source_identifier_type": "ISSN"}]}, "item_2_text_4": {"attribute_name": "タイトルヨミ", "attribute_value_mlt": [{"subitem_text_language": "ja-Kana", "subitem_text_value": "シリコン ハンドウタイ ケンシュツキ ニオケル プラズマ コウカ ノ ケンキュウ 1"}]}, "item_2_version_type_20": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2020-02-27"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "KJ00000561040.pdf", "filesize": [{"value": "544.8 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 544800.0, 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シリコン半導体検出器におけるプラズマ効果の研究(I)
https://doi.org/10.34429/00000839
https://doi.org/10.34429/00000839